Water-Brash
发表于 2025-3-28 16:17:57
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远地点
发表于 2025-3-28 21:49:04
The Conditions of Device Simulation using Full Hydrodynamic Equationsot. In devices such as short-gate (gates of order a few tens of nanometers) MESFET’s, quantum effects such as tunneling, become important. We describe aspects of the generalization to a quantum description, and the need to use appropriate initial conditions. We have introduced an effective potential
曲解
发表于 2025-3-29 00:23:50
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FAST
发表于 2025-3-29 07:06:28
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Cognizance
发表于 2025-3-29 10:27:19
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Immortal
发表于 2025-3-29 11:39:53
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folliculitis
发表于 2025-3-29 19:26:00
Beschreibung von Steuerungsaufgaben,d numerical capabilities. It is the purpose of this paper to outline these challenges and to suggest algorithmic steps toward the development of a physically-based device simulation tool, predictive into the deep-submicron regime.
inspired
发表于 2025-3-29 19:57:07
https://doi.org/10.1007/978-3-658-21885-0pendent upwind methods. For the ballistic diode (which models the channel of a MOSFET), the shock wave is fully developed in Si (with a 1 volt bias) at 300 K for a 0.1 micron channel and at 77 K for a 1.0 micron channel.
他日关税重重
发表于 2025-3-30 00:52:28
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MERIT
发表于 2025-3-30 05:29:50
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