Guffaw
发表于 2025-3-21 19:41:05
书目名称Compound Semiconductor Materials and Devices影响因子(影响力)<br> http://impactfactor.cn/2024/if/?ISSN=BK0231860<br><br> <br><br>书目名称Compound Semiconductor Materials and Devices影响因子(影响力)学科排名<br> http://impactfactor.cn/2024/ifr/?ISSN=BK0231860<br><br> <br><br>书目名称Compound Semiconductor Materials and Devices网络公开度<br> http://impactfactor.cn/2024/at/?ISSN=BK0231860<br><br> <br><br>书目名称Compound Semiconductor Materials and Devices网络公开度学科排名<br> http://impactfactor.cn/2024/atr/?ISSN=BK0231860<br><br> <br><br>书目名称Compound Semiconductor Materials and Devices被引频次<br> http://impactfactor.cn/2024/tc/?ISSN=BK0231860<br><br> <br><br>书目名称Compound Semiconductor Materials and Devices被引频次学科排名<br> http://impactfactor.cn/2024/tcr/?ISSN=BK0231860<br><br> <br><br>书目名称Compound Semiconductor Materials and Devices年度引用<br> http://impactfactor.cn/2024/ii/?ISSN=BK0231860<br><br> <br><br>书目名称Compound Semiconductor Materials and Devices年度引用学科排名<br> http://impactfactor.cn/2024/iir/?ISSN=BK0231860<br><br> <br><br>书目名称Compound Semiconductor Materials and Devices读者反馈<br> http://impactfactor.cn/2024/5y/?ISSN=BK0231860<br><br> <br><br>书目名称Compound Semiconductor Materials and Devices读者反馈学科排名<br> http://impactfactor.cn/2024/5yr/?ISSN=BK0231860<br><br> <br><br>
600
发表于 2025-3-21 21:33:39
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Formidable
发表于 2025-3-22 02:42:48
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condone
发表于 2025-3-22 05:28:04
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切掉
发表于 2025-3-22 12:09:47
https://doi.org/10.1007/978-3-658-14688-7s presented and analyzed. To explore the potential of GaN HEMTs in RF power applications, device configuration elements are correlated with several key device performance parameters. Four device scaling technologies, namely, source/strain regrowth, (In)AlN barrier thinning, T-gate fabrication, and g
arabesque
发表于 2025-3-22 16:02:12
978-3-031-00900-6Springer Nature Switzerland AG 2016
arabesque
发表于 2025-3-22 19:19:16
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glacial
发表于 2025-3-23 01:02:12
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Repetitions
发表于 2025-3-23 05:11:22
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外面
发表于 2025-3-23 06:55:48
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