Guffaw 发表于 2025-3-21 19:41:05
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https://doi.org/10.1007/978-3-658-14688-7s presented and analyzed. To explore the potential of GaN HEMTs in RF power applications, device configuration elements are correlated with several key device performance parameters. Four device scaling technologies, namely, source/strain regrowth, (In)AlN barrier thinning, T-gate fabrication, and garabesque 发表于 2025-3-22 16:02:12
978-3-031-00900-6Springer Nature Switzerland AG 2016arabesque 发表于 2025-3-22 19:19:16
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