替代品 发表于 2025-3-28 16:15:21
Surface Electrons at Plasma Wallsasma sheath. First we introduce a model for the electron surface layer to study the quasistationary electron distribution and the potential at an unbiased plasma wall. Then we calculate sticking coefficients and desorption times for electron trapping in the image states. Finally we study how surplus轮流 发表于 2025-3-28 19:05:29
Characterization of Local Structures in Plasma Deposited Semiconductors by X-ray Absorption Spectrossemiconductors. Grazing incidence geometry EXAFS is a very effective tool to study the surface layers. Since EXAFS is an element specific sensitive local structural probe, it is advantageous to commonly used structural characterization techniques where there is no long-range crystalline order in matCLASP 发表于 2025-3-28 23:30:35
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Microcavity and Microchannel Plasmas: General Characteristics and Emerging Applicationspplications. This chapter provides a brief overview of the current understanding of microplasma physics, and discusses the distinctives of microcavity plasmas with respect to conventional (macroscopic) plasmas. Notable properties of microcavity plasmas include their peak and time-averaged electron d阻塞 发表于 2025-3-29 10:18:06
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Book 2014s they present and an overview of their potential technological applications..Complex plasmas differ from conventional high-temperature plasmas in several ways: they may contain additional species, including nano meter- to micrometer-sized particles, negative ions, molecules and radicals and they macovert 发表于 2025-3-30 03:09:54
,Stadtgespräch mit Bernhard Schäfers,ion techniques used and the handling of competing numerical errors are discussed in detail. Results are presented for the wakefield around a single dust grain as well as multiscale simulations of a correlated ensemble of grains revealing fundamental structural changes when wake effects take charge.Ptsd429 发表于 2025-3-30 07:03:38
J. Baumüller,G. Baumbach,U. Hoffmanroduced. The data reduction and analyses with the structural model calculations will be discussed. The application of the EXAFS in plasma deposited silicon wafers and plasma-plume deposited high-k dielectric thin films will be presented.