Metastasis
发表于 2025-3-25 06:06:45
Integrated Resistor Modelingors (which are really JFETs). The model includes geometry and temperature dependence, and also has statistical variability, including mismatch, built in. Details of some useful parameter extraction procedures are provided.
溺爱
发表于 2025-3-25 08:17:22
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Epidural-Space
发表于 2025-3-25 14:49:29
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Obscure
发表于 2025-3-25 18:13:02
Introduction to Bipolar Transistor Modelingpsulates the core description of BJT operation. The development of approximations to this key relationship, which leads to the widely known and used SGP (SPICE Gummel-Poon) model, are detailed, as are modifications necessary for modeling III-V HBT devices.
Frequency
发表于 2025-3-25 23:59:51
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FAWN
发表于 2025-3-26 01:25:53
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小官
发表于 2025-3-26 04:37:25
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蛰伏
发表于 2025-3-26 12:17:00
https://doi.org/10.1007/978-3-663-11396-6 Philips Research) Laboratories is demonstrated in detail. The first CMC (Compact Modeling Council) standard high voltage MOSFET model HiSIM_HV developed by Hiroshima University is explained as well. Finally, characterization and measurement strategies for LDMOS modeling are described.
娘娘腔
发表于 2025-3-26 13:20:24
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珐琅
发表于 2025-3-26 19:14:29
High-Voltage MOSFET Modeling Philips Research) Laboratories is demonstrated in detail. The first CMC (Compact Modeling Council) standard high voltage MOSFET model HiSIM_HV developed by Hiroshima University is explained as well. Finally, characterization and measurement strategies for LDMOS modeling are described.