黑暗社会
发表于 2025-3-21 18:01:17
书目名称Cohesive Properties of Semiconductors under Laser Irradiation影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0229240<br><br> <br><br>书目名称Cohesive Properties of Semiconductors under Laser Irradiation影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0229240<br><br> <br><br>书目名称Cohesive Properties of Semiconductors under Laser Irradiation网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0229240<br><br> <br><br>书目名称Cohesive Properties of Semiconductors under Laser Irradiation网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0229240<br><br> <br><br>书目名称Cohesive Properties of Semiconductors under Laser Irradiation被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0229240<br><br> <br><br>书目名称Cohesive Properties of Semiconductors under Laser Irradiation被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0229240<br><br> <br><br>书目名称Cohesive Properties of Semiconductors under Laser Irradiation年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0229240<br><br> <br><br>书目名称Cohesive Properties of Semiconductors under Laser Irradiation年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0229240<br><br> <br><br>书目名称Cohesive Properties of Semiconductors under Laser Irradiation读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0229240<br><br> <br><br>书目名称Cohesive Properties of Semiconductors under Laser Irradiation读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0229240<br><br> <br><br>
抗生素
发表于 2025-3-21 22:17:47
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osteopath
发表于 2025-3-22 03:10:41
Transport Theory,unctions. Then, in the limit of long times and large distances, these kinetic equations lead to transport equations for the (quasi-) conserved quantities. This last step provides explicit expressions for the transport coefficients in terms of the microscopic properties of the particles and the inter
渗透
发表于 2025-3-22 06:01:14
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PANG
发表于 2025-3-22 11:48:23
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MINT
发表于 2025-3-22 13:17:21
Theory of Crystal Growth,ire quite a number of material parameters as an input, for example the lattice symmetry of a crystal, since obviously we cannot hope to explain macroscopic crystalline structure starting from microscopic quantum mechanical formulation (at least in most cases!).
MINT
发表于 2025-3-22 19:12:29
Dynamical Processes during Solidification,face layer during solidification. It leads to a slowing down of the thermal diffusion by about five orders of magnitude relative to the melt. The model and the experiments lead to a thickness of the interface layer of a few µm. Universal laws for free and directional solidification are proposed on t
镇压
发表于 2025-3-22 23:14:30
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割让
发表于 2025-3-23 04:23:43
Transient Bulk Induced Nucleation in Amorphous Group IV Semiconductors,licon with the theory of transient nucleation[ 1] . The phenomena has been observed [ 2,3] in a temperature range of 660–678 K in germanium and of 833–873 K in silicon. Before the steady state regime, a transient period of duration τ occurs. We determine an expression for τ and show that it is therm
占线
发表于 2025-3-23 09:03:31
Crystalline, Amorphous and Liquid Silicon,ious phases of silicon : ion-implanted layers (which are amorphous), crystal and liquid. Most authors believe that during laser annealing the surface layer melts and recrystallizes in times of order of hundreds of nanoseconds, i.e. short enough to avoid diffusion of dopants.