relieve
发表于 2025-3-28 16:12:50
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Pessary
发表于 2025-3-28 20:09:32
Feature and Mechanisms of Layer Growth in Liquid Phase Epitaxy of Semiconductor Materials,c quality of wafers which are cut from bulk crystals is not good enough for making active devices directly on wafers, to grow same materials as substrates but better quality on wafers (.). Epitaxial growth can be also applied for making stacked multi-layer structures of several layers for such as in
废墟
发表于 2025-3-29 00:46:35
Sol-Gel Deposition Processes of Thin Ceramic Films,de range of film compositions can be manufactured by gas phase or liquid phase deposition methods. Due to the high apparative costs of gas phase methods, the use of the sol-gel processing offers advantages by sufficiently inexpensive film technologies. Additionally, purity and stability of the precu
Cryptic
发表于 2025-3-29 04:40:38
Thin Film Deposition By Sol-Gel and CVD Processing of Metal-Organic Precursors,Sol-Gel techniques [.–.]. The success of chemical synthesis routes is largely attributed to the availability of molecular compounds that can be transformed via solution (Sol-Gel) [.–.] or gas phase (CVD) [.,.] reactions into high-purity coatings of desired ceramics or composites. In contrast to the
separate
发表于 2025-3-29 08:00:06
Numerical Simulation of Flow and Chemistry in Thermal Chemical Vapor Deposition Processes,n wafers in the IC-industry, decorative coatings, anti-reflection and spectrally selective coatings on optical components, and anti-corrosion and anti-wear layers on mechanical tools. CVD is very versatile and offers good control of film structure and composition, excellent uniformity, and the capab
Tartar
发表于 2025-3-29 13:33:10
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decode
发表于 2025-3-29 19:08:28
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mechanism
发表于 2025-3-29 22:09:32
Reaction Mechanisms in Laser-Assisted Chemical Vapor Deposition of Microstructures,onic materials and devices for various applications such as wafer marking, substrate surface cleaning, doping and oxidation of silicon, etching and deposition of thin films, exposure or removal of photo-resists, and recrystallization of silicon on insulator substrates [.–.]. The desirability of usin