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https://doi.org/10.1007/978-1-84882-059-3Catalysis; Defect; Diffusion; Microelectronics; SRUS; Semiconductor; Sensor; thermodynamics; transistor可触知 发表于 2025-3-26 12:13:34
978-1-84996-820-1Springer-Verlag London 2009glamor 发表于 2025-3-26 14:26:23
Introduction,l performance, various forms of “defect engineering” have been developed to control defect behavior within the solid. Similarly, a better understanding of surface defects is becoming increasingly important in applications. It has long been known that semiconductor defects can be electrically charged美丽的写 发表于 2025-3-26 19:10:07
Fundamentals of Defect Ionization and Transport,s of defect charging and defect-defect reactions. Basic equations are given to describe the free energies of charging together with ionization levels, thereby permitting calculation of the most stable charge state and its concentration relative to other states. An unusually comprehensive treatment o