近地点 发表于 2025-3-21 18:31:57
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Introduction to NVM Devices,non and magnetic materials were some of the first materials having the hysteresis or the alternation between two different states depending on the magnetization direction, i.e., magnetic field up or down that is necessary for Boolean-logic devices.一条卷发 发表于 2025-3-22 04:39:32
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http://reply.papertrans.cn/23/2241/224073/224073_5.pngseparate 发表于 2025-3-22 14:44:02
Book 2015of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced..separate 发表于 2025-3-22 18:54:58
concepts for non-volatile memory devices.Focuses on conduct.This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved a托运 发表于 2025-3-23 00:24:03
http://reply.papertrans.cn/23/2241/224073/224073_8.pngverdict 发表于 2025-3-23 05:22:32
http://reply.papertrans.cn/23/2241/224073/224073_9.pngFLIP 发表于 2025-3-23 09:27:48
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