谦虚的人 发表于 2025-3-23 12:31:29
Fundamentals of Amorphous Semiconductorsdes are described. Concepts of negative correlation energy and valence alternation pairs are introduced. Anderson localisation and percolation in amorphous networks are discussed. The chapter is concluded by a description of experimental techniques to fabricate amorphous chalcogenides.600 发表于 2025-3-23 15:07:56
http://reply.papertrans.cn/23/2234/223386/223386_12.pngGobble 发表于 2025-3-23 21:49:35
http://reply.papertrans.cn/23/2234/223386/223386_13.pngFlat-Feet 发表于 2025-3-24 01:56:55
5.6.5 Magneto-crystalline anisotropy,d its phenomenological interpretation within the configuration-coordinate model. Subsequently, results of in-situ EXAFS and ESR studies are described as well as a possible atomistic model of the reversible photostructural changes.毁坏 发表于 2025-3-24 06:05:19
http://reply.papertrans.cn/23/2234/223386/223386_15.pngDetonate 发表于 2025-3-24 07:12:37
http://reply.papertrans.cn/23/2234/223386/223386_16.pngexceptional 发表于 2025-3-24 12:28:30
5.2 List of symbols and abbreviations, Effect of light polarisation on photo-induced phenomena in chalcogenide glasses are described and the existing microscopic models discussed.Wernickes-area 发表于 2025-3-24 15:31:40
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http://reply.papertrans.cn/23/2234/223386/223386_19.pngEncoding 发表于 2025-3-25 00:21:19
https://doi.org/10.1007/3-540-46440-9The chapter is dedicated to the global and local structure of the crystalline phase of GeTe-based phase-change materials and include both experimental and first-principle simulation results.