gonioscopy
发表于 2025-3-23 12:46:50
Selected Algorithms from the Literature,ntain an amorphous film of nanometer thickness. It is shown that this is the equilibrium configuration of the doped grain boundary, and that in contrast to conclusions from previous studies, virtually all boundaries in Bi-doped ZnO contain a thin intergranular film.
独行者
发表于 2025-3-23 15:20:04
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Eulogy
发表于 2025-3-23 19:52:23
https://doi.org/10.1007/978-3-658-14003-8 of its low susceptibility to X-ray, ultraviolet, and gamma radiation damage.. The interest in diamond as a semiconductor stems from its ability to operate at temperatures between 100°C and 500°C, beyond the range of most smaller band gap semiconductors..
overweight
发表于 2025-3-23 22:27:29
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温和女人
发表于 2025-3-24 03:18:56
Morphology and Microstructure of A1N Single Crystals on Si (111): A Combination of Surface Electron pansion coefficient close to that of Si (4–5 × 10./K for A1N and 3 × 10./K for Si) make the A1N/Si system a good candidate for microelectronics and for use in metal-insulator-semiconductor (MIS) devices. These applications require high quality crystals and low contamination in order to obtain near-ideal material characteristics.
顽固
发表于 2025-3-24 07:36:14
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epidermis
发表于 2025-3-24 10:48:30
https://doi.org/10.1007/978-3-658-13765-6 attractive and repulsive forces (Clarke, 1987). Two examples where these minute microstructural features have a significant influence on final properties include creep behavior in Si.N. (Raj, 1993) and electronic conductivity in ruthenate thick film resistors (Chiang, et al., 1994).
Derogate
发表于 2025-3-24 18:09:08
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ABASH
发表于 2025-3-24 22:00:01
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Pde5-Inhibitors
发表于 2025-3-24 23:14:34
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