STERN
发表于 2025-3-23 10:22:47
Andrei Pavlov,Manoj SachdevGives a process-aware perspective on SRAM circuit design and test.Provides detailed coverage of SRAM cell stability, stability sensitivity and analytical evaluation of Static Noise Margin.Introduces t
PLE
发表于 2025-3-23 15:23:13
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Buttress
发表于 2025-3-23 21:07:15
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Canvas
发表于 2025-3-23 23:57:31
978-90-481-7855-1Springer Science+Business Media B.V. 2008
勾引
发表于 2025-3-24 02:59:03
CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies978-1-4020-8363-1Series ISSN 0929-1296
genesis
发表于 2025-3-24 09:51:04
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阴郁
发表于 2025-3-24 12:43:16
Bing Zhou,Scott Han,Gabor A. Somorjaiyield constraints. Near minimumsize cell transistors exhibit higher susceptibility with respect to process variations. Thirdly, the cell layout largely determines the SRAM critical area, which is the chip yield limiter. Meeting the design constraints requires deeper understanding of the involved tra
不来
发表于 2025-3-24 15:25:24
Surendra P. Shah,Pengkun Hou,Xin Chengole pairs to upset the storage nodes of SRAM cells. Such an upset is called a .. While such an upset can cause a data error, the device structures are not permanently damaged. If the voltage disturbance on a storage node of an SRAM cell is smaller than the noise margin of that node, the cell will co
FAR
发表于 2025-3-24 22:29:33
SRAM Cell Stability: Definition, Modeling and Testing,
松驰
发表于 2025-3-24 23:30:31
Techniques for Detection of SRAM Cells with Stability Faults,