adipose-tissue 发表于 2025-3-25 07:01:31

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无关紧要 发表于 2025-3-25 09:50:39

CMOS Transistor Reliability and Variability Mechanisms,This chapter talks about device reliability mechanisms such as hot electron injection, gate oxide breakdown, negative bias temperature instability and process variation.

方便 发表于 2025-3-25 11:46:10

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flaggy 发表于 2025-3-25 16:20:44

Power Amplifier Reliability,This chapter talks about power amplifier reliability subjected to voltage stress and thermal effect. Both class AB and class E power amplfiiers are discussed. In addition, the class E power amplifier is fabricated using 0.18 micron CMOS process and experimental data of power amplifier performance before and after stress are presented.

必死 发表于 2025-3-25 20:28:42

Voltage-Controlled Oscillator Reliability,This chapter talks about the LC oscillator reliability subjected to electrical stress. Mixed-mode device and circuit simulation results as well as experimental data of voltage-controlled LC oscillators are presented.

钢笔尖 发表于 2025-3-26 04:13:31

Mixer Reliability,This chapter talks about millimeter-wave mixer reliability subjected to electrical stress. Transistor stress data in additional to mixer performance before and after stress are provided.

EVEN 发表于 2025-3-26 08:06:17

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眼界 发表于 2025-3-26 11:36:50

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Emg827 发表于 2025-3-26 14:25:42

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Locale 发表于 2025-3-26 20:18:46

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查看完整版本: Titlebook: CMOS RF Circuit Design for Reliability and Variability; Jiann-Shiun Yuan Book 2016 The Author(s) 2016 Device Reliaiblity.Hot Electron Effe