Entreaty
发表于 2025-3-25 04:35:55
ESD Protection,umulated on a human body, a test device, or a chip through a low-impedance path due to either human handling or a machine contact. ESD damage to a chip include gate oxide breakdown caused by an excessive gate voltage and interconnect burn-out, such as contact spiking, silicide spiking, and metal mig
易于
发表于 2025-3-25 09:05:26
Book 2007its, possess many unique and attractive characteristics over their voltage-mode counterparts including a small nodal time constant, high current swing in the presence of a low supply voltage, reduced distor tion, a low input impedance, a high output impedance, less sensitive to switching noise, and
故意钓到白杨
发表于 2025-3-25 14:31:06
Z. Werner,W. Szymczyk,J. Piekoszewskiing from the reduced wire width and height, and frequency-dependent skin effect . The increased frequency of signals further demands that the inductive effect of wire channels be considered fully as the performance of wire channels at high frequencies is largely dominated by the inductive effect .
得罪人
发表于 2025-3-25 17:25:08
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你不公正
发表于 2025-3-25 20:03:43
https://doi.org/10.1007/978-3-540-37578-4ss of the gate oxide and the width of the pn-junctions of MOS devices. The amount of energy needed to damage MOS devices is scaled down with technology. The level of ESD stress generated due to either human handling or device contacting, however, remains unchanged. Modern CMOS circuits are much more vulnerable to ESD stress.
男生如果明白
发表于 2025-3-26 01:15:38
Wire Channels,ing from the reduced wire width and height, and frequency-dependent skin effect . The increased frequency of signals further demands that the inductive effect of wire channels be considered fully as the performance of wire channels at high frequencies is largely dominated by the inductive effect .
FRET
发表于 2025-3-26 04:34:38
http://reply.papertrans.cn/23/2204/220344/220344_27.png
警告
发表于 2025-3-26 11:48:00
ESD Protection,ss of the gate oxide and the width of the pn-junctions of MOS devices. The amount of energy needed to damage MOS devices is scaled down with technology. The level of ESD stress generated due to either human handling or device contacting, however, remains unchanged. Modern CMOS circuits are much more vulnerable to ESD stress.
Ordeal
发表于 2025-3-26 13:13:16
1872-082X niques; modeling of wire channels, electrical signaling for Current-mode circuits, where information is represented by the branch currents of the circuits rather than the nodal voltages as of voltage-mode circuits, possess many unique and attractive characteristics over their voltage-mode counterpar
ENDOW
发表于 2025-3-26 19:48:27
Book 2007ch- current circuits, and current-mode logic circuits, are excluded. The book is organized as the followings : Chapter 1 examines the distinct characteristics of ideal voltage-mode and current-mode circuits. The topology duaUty of these two classes of circuits is investigated using the concept of in