STRI
发表于 2025-3-21 19:49:02
书目名称Bismuth-Containing Alloys and Nanostructures影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0188881<br><br> <br><br>书目名称Bismuth-Containing Alloys and Nanostructures影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0188881<br><br> <br><br>书目名称Bismuth-Containing Alloys and Nanostructures网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0188881<br><br> <br><br>书目名称Bismuth-Containing Alloys and Nanostructures网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0188881<br><br> <br><br>书目名称Bismuth-Containing Alloys and Nanostructures被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0188881<br><br> <br><br>书目名称Bismuth-Containing Alloys and Nanostructures被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0188881<br><br> <br><br>书目名称Bismuth-Containing Alloys and Nanostructures年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0188881<br><br> <br><br>书目名称Bismuth-Containing Alloys and Nanostructures年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0188881<br><br> <br><br>书目名称Bismuth-Containing Alloys and Nanostructures读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0188881<br><br> <br><br>书目名称Bismuth-Containing Alloys and Nanostructures读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0188881<br><br> <br><br>
遗忘
发表于 2025-3-21 21:55:55
Bismuth-Related Nanostructures,Bismuth can modify surface reconstruction of III-V semiconductors and affect their growth conditions. Bismuth incorporation into III-Vs strongly changes their electronic properties. We present an overview of how the above Bi-related effects influence structural and optical properties of III-V nanostructures.
斑驳
发表于 2025-3-22 02:32:11
http://reply.papertrans.cn/19/1889/188881/188881_3.png
Dawdle
发表于 2025-3-22 05:27:34
http://reply.papertrans.cn/19/1889/188881/188881_4.png
Melodrama
发表于 2025-3-22 09:58:13
Lehrbuch der Hochfrequenztechnikd and discussed extensively. Empirical models, including tight-binding (TB) model, band anti-crossing (BAC), valance band anti-crossing (VBAC), and . model, have been widely applied in calculations of electronic properties of dilute bismide III-V materials. First-principle methods have also been use
Ganglion
发表于 2025-3-22 16:43:28
Lehrbuch der Hochfrequenztechniking this material have been produced, such as quantum well lasers, LEDs, solar cells, etc. The Bi incorporated into AlAs is expected to change the bandgap from indirect to direct. There are only a few theoretical reports on AlAsBi, however, experimental research results are seldom reported. In this
网络添麻烦
发表于 2025-3-22 18:17:05
,Elektronenröhren und Halbleiter,egion. However, the alloys are highly metastable due to the large covalent radius of the Bi atom compared to the other group V atoms, which are replaced in the cubic zinc-blende lattice. Hence, carefully adjusted growth conditions at low growth temperatures are required in order to incorporate a sig
英寸
发表于 2025-3-22 23:05:18
H. Brunswig,R. W. Lorenz,A. Vlcek,O. Zinkey (MBE) and their surface morphology, structural, and optical properties are investigated along with device applications. We describe how the Bi content in GaAs1−xBix epilayers grown on (100), (411)A, and (411)B GaAs substrates can be controlled by the growth conditions. Nonstandard growth condition
fringe
发表于 2025-3-23 03:45:55
http://reply.papertrans.cn/19/1889/188881/188881_9.png
obviate
发表于 2025-3-23 08:50:42
http://reply.papertrans.cn/19/1889/188881/188881_10.png