Crayon
发表于 2025-3-23 10:19:03
1865-0929 nference on Biomedical Engineering Systems and Technologies, BIOSTEC 2013, held in Barcelona, Spain, in February 2013. The 28 revised full papers presented were carefully reviewed and selected from a total of 392 submissions. The papers cover a wide range of topics and are organized in four general
indices
发表于 2025-3-23 15:48:04
Conference proceedings 2014and Technologies, BIOSTEC 2013, held in Barcelona, Spain, in February 2013. The 28 revised full papers presented were carefully reviewed and selected from a total of 392 submissions. The papers cover a wide range of topics and are organized in four general topical sections on biomedical electronics
鲁莽
发表于 2025-3-23 22:07:00
https://doi.org/10.1007/978-88-470-0792-5. The modulator was designed using a commercial 0.18 .m CMOS process with a supply voltage of 900 mV. With an input signal bandwidth of 1 kHz it achieves a SNDR of 61.2 dB using an over-sampling ratio of 500. Power dissipation is 165 .W and it occupies 0.0225 mm. of silicon area.
Eulogy
发表于 2025-3-23 22:46:37
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COKE
发表于 2025-3-24 03:22:55
https://doi.org/10.1007/978-88-470-0613-3generally intractable in this method. To mitigate this computational difficulty, we proposed approximate analysis method using network motifs to circumvent the computational difficulty of LTL satisfiability checking. Experiments show that our approximate method is surprisingly efficient.
graphy
发表于 2025-3-24 07:01:13
https://doi.org/10.1007/978-88-470-0613-3dic boundary conditions, and this enables exact analytic formulae for the mean and variance to be derived. The formulae are confirmed using numerical simulations, and asymptotic approximations to the full distribution are tested.
违反
发表于 2025-3-24 11:50:16
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鉴赏家
发表于 2025-3-24 15:06:11
A 2nd Order CMOS Sigma-Delta Modulator Design Suitable for Low-Power Biosensor Applications. The modulator was designed using a commercial 0.18 .m CMOS process with a supply voltage of 900 mV. With an input signal bandwidth of 1 kHz it achieves a SNDR of 61.2 dB using an over-sampling ratio of 500. Power dissipation is 165 .W and it occupies 0.0225 mm. of silicon area.
AUGER
发表于 2025-3-24 22:28:45
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含糊其辞
发表于 2025-3-25 02:23:33
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