Constrict
发表于 2025-3-21 18:41:42
书目名称Bio-Inspired Information Pathways影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0186348<br><br> <br><br>书目名称Bio-Inspired Information Pathways影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0186348<br><br> <br><br>书目名称Bio-Inspired Information Pathways网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0186348<br><br> <br><br>书目名称Bio-Inspired Information Pathways网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0186348<br><br> <br><br>书目名称Bio-Inspired Information Pathways被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0186348<br><br> <br><br>书目名称Bio-Inspired Information Pathways被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0186348<br><br> <br><br>书目名称Bio-Inspired Information Pathways年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0186348<br><br> <br><br>书目名称Bio-Inspired Information Pathways年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0186348<br><br> <br><br>书目名称Bio-Inspired Information Pathways读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0186348<br><br> <br><br>书目名称Bio-Inspired Information Pathways读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0186348<br><br> <br><br>
Negligible
发表于 2025-3-21 20:38:55
Critical Discussion of Ex situ and In situ TEM Measurements on Memristive Devices,paration processes and electron beam irradiation can lead to a chemical and structural modification of the active layers. Moreover, devices may show significant device-to-device variability due to the details of processing parameters. Thus, it is essential to characterize the identical device electrically before microstructural analysis.
Pastry
发表于 2025-3-22 00:46:38
Schiffbautechnischen Gesellschaftparation processes and electron beam irradiation can lead to a chemical and structural modification of the active layers. Moreover, devices may show significant device-to-device variability due to the details of processing parameters. Thus, it is essential to characterize the identical device electrically before microstructural analysis.
陈列
发表于 2025-3-22 04:56:58
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否认
发表于 2025-3-22 10:14:30
Bericht über das 31. Geschäftsjahr 1929Al.O./Nb.O./Au and TiN/TiO./HfO./Au, either prepared by reactive DC-magnetron sputtering, etching and optical lithography. It is shown that the memristive properties of such devices can be engineered, which enables tailoring of the memristive devices for particular applications.
暂停,间歇
发表于 2025-3-22 14:11:44
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分散
发表于 2025-3-22 17:18:14
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纹章
发表于 2025-3-22 21:40:45
Redox-Based Bi-Layer Metal Oxide Memristive Devices,Al.O./Nb.O./Au and TiN/TiO./HfO./Au, either prepared by reactive DC-magnetron sputtering, etching and optical lithography. It is shown that the memristive properties of such devices can be engineered, which enables tailoring of the memristive devices for particular applications.
Recessive
发表于 2025-3-23 04:43:28
Integration of Memristive Devices into a 130 nm CMOS Baseline Technology,y used deposition technique for the CMOS compatible memristive switching layers is presented. Finally, the implementation of the optimized process for the fabrication of the memristive module and its influence on the device performance is presented in terms of electrical characterization results.
Mumble
发表于 2025-3-23 08:21:37
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