Tracheotomy
发表于 2025-3-23 12:38:24
Michał Baczyński,Balasubramaniam Jayaram. The indirect methods involve the measurement of certain physical properties of the semiconductors that result from the diffusions, such as their electrical conductivity, resistivity, or their optical reflectivity in the infrared range, etc.
热心
发表于 2025-3-23 15:04:40
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排他
发表于 2025-3-23 21:47:43
on has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffu
易碎
发表于 2025-3-24 01:26:22
Michał Baczyński,Balasubramaniam Jayaramard to the preparative history of the crystals. Recently, however, there have been a number of careful studies showing the relationship between the crystal preparation, the point defect structure and the properties of these semiconductors.
Kidney-Failure
发表于 2025-3-24 03:17:08
Diffusion in the Chalcogenides of Zn, Cd And Pb,ard to the preparative history of the crystals. Recently, however, there have been a number of careful studies showing the relationship between the crystal preparation, the point defect structure and the properties of these semiconductors.
irreparable
发表于 2025-3-24 09:18:17
Book 1973ell established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion proce
圆桶
发表于 2025-3-24 12:28:42
Phase Relationships in Semiconductors,e very dilute solutions involved, the amount of reliable experimental data is still rather limited.t Studies of non-equilibrium processes have been hindered by the problems of measuring all the parameters involved but a considerable body of semiempirical data has been amassed.
wangle
发表于 2025-3-24 16:07:17
Diffusion in Oxide Semiconductors,diffusion depends on temperature, oxide structure, the number of point defects in the oxide and hence the position of the metal in the periodic table and finally on the partial pressure of oxygen coexisting over a particular oxide. Special attention will be directed to the role of the partial pressure in equilibrium with the oxide.
泥瓦匠
发表于 2025-3-24 21:49:12
Fuzzy Implications from Uninormse very dilute solutions involved, the amount of reliable experimental data is still rather limited.t Studies of non-equilibrium processes have been hindered by the problems of measuring all the parameters involved but a considerable body of semiempirical data has been amassed.
expire
发表于 2025-3-25 02:15:28
Chang Shu,Zhi-wen Mo,Xiao Tang,Zhi-hua Zhangdiffusion depends on temperature, oxide structure, the number of point defects in the oxide and hence the position of the metal in the periodic table and finally on the partial pressure of oxygen coexisting over a particular oxide. Special attention will be directed to the role of the partial pressure in equilibrium with the oxide.