游牧
发表于 2025-3-21 17:16:28
书目名称Application of High Magnetic Fields in Semiconductor Physics影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0159119<br><br> <br><br>书目名称Application of High Magnetic Fields in Semiconductor Physics影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0159119<br><br> <br><br>书目名称Application of High Magnetic Fields in Semiconductor Physics网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0159119<br><br> <br><br>书目名称Application of High Magnetic Fields in Semiconductor Physics网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0159119<br><br> <br><br>书目名称Application of High Magnetic Fields in Semiconductor Physics被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0159119<br><br> <br><br>书目名称Application of High Magnetic Fields in Semiconductor Physics被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0159119<br><br> <br><br>书目名称Application of High Magnetic Fields in Semiconductor Physics年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0159119<br><br> <br><br>书目名称Application of High Magnetic Fields in Semiconductor Physics年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0159119<br><br> <br><br>书目名称Application of High Magnetic Fields in Semiconductor Physics读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0159119<br><br> <br><br>书目名称Application of High Magnetic Fields in Semiconductor Physics读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0159119<br><br> <br><br>
旅行路线
发表于 2025-3-21 21:15:11
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FOR
发表于 2025-3-22 02:48:13
Electron-electron interaction effects in p-type germanium inversion layers,o 20 Tesla. A logarithmic correction of conductivity and Hall-coefficient together with a positive magneto-resistance ∞ In B in the parallel and transverse configuration suggests the existence of electron-electron interaction effects. The scaling of the magneto-resistance with B/T can be explained with Zeeman splitting of the energy levels.
打折
发表于 2025-3-22 04:56:56
Application of High Magnetic Fields in Semiconductor Physics978-3-540-39472-3Series ISSN 0075-8450 Series E-ISSN 1616-6361
helper-T-cells
发表于 2025-3-22 11:58:27
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细微差别
发表于 2025-3-22 15:30:55
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赏钱
发表于 2025-3-22 20:59:16
https://doi.org/10.1007/978-3-642-69302-1o 20 Tesla. A logarithmic correction of conductivity and Hall-coefficient together with a positive magneto-resistance ∞ In B in the parallel and transverse configuration suggests the existence of electron-electron interaction effects. The scaling of the magneto-resistance with B/T can be explained with Zeeman splitting of the energy levels.
直觉没有
发表于 2025-3-22 23:41:16
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漫不经心
发表于 2025-3-23 01:49:03
Embryology and the Rise of the Gothic NovelWe have studied the temperature dependence of the quantum Hall effect in modulation-doped InGaAs-InP heterojunctions from 4.2 K to 50 mK. The results are briefly discussed in terms of electron localisation.
Restenosis
发表于 2025-3-23 08:22:16
Embryology and the Rise of the Gothic NovelIn semiconductor inversion layers with an applied strong magnetic field, the resistance can vanish and the Hall resistance take discrete values h/ie. (i = 1,2,...). We consider the possibility that this might be an occurrence of a macroscopic quantum state.