Lignans 发表于 2025-3-28 17:40:00
http://reply.papertrans.cn/16/1559/155812/155812_41.pngNutrient 发表于 2025-3-28 21:00:10
http://reply.papertrans.cn/16/1559/155812/155812_42.pngmicronutrients 发表于 2025-3-28 23:35:27
,Die Pathogenese der Ödemkrankheit,e signal envelope, the class-D operation is extended towards RF systems too..The spurious emissions generated by the switching operation, are well separated from the signal band by the use of an asynchronous pulse-width modulator. Measurements on a test-chip prove the feasibility of the switching technique.stress-test 发表于 2025-3-29 03:23:03
Die Öffentlichkeiten der Erziehung scheme contains link power management features and provides multiple communication modes to adapt efficiently to bandwidth needs. This interface has been implemented in 65nm CMOS and measurement results are shown.chisel 发表于 2025-3-29 09:07:13
Das Bild des diskreditierten Staatess are discussed. In particular, power consumption, noise and linearity trade-offs in low-noise amplifiers, mixers, frequency dividers and oscillators are considered. The concepts derived are applied to a large class of wireless communications standards that are broadband in nature at RF and/or require a broadband IF.连锁 发表于 2025-3-29 12:40:56
Power Combining Techniques for RF and mm-Wave CMOS Power Amplifiersced and it is clarified how this technique can alleviate some of the problems related to the aggressive CMOS scaling. The theory is clarified by several design examples that cover a frequency range from the lower GHz as high as 60 GHz.Acquired 发表于 2025-3-29 15:38:47
http://reply.papertrans.cn/16/1559/155812/155812_47.pngEjaculate 发表于 2025-3-29 21:30:28
http://reply.papertrans.cn/16/1559/155812/155812_48.png装入胶囊 发表于 2025-3-29 23:52:58
http://reply.papertrans.cn/16/1559/155812/155812_49.pngKIN 发表于 2025-3-30 07:39:17
Heterogeneous Integration of Passive Components for the Realization of RF-System-in-Packagesgh precision passive components. In order to be produced cost-effectively, these elements need to be integrated along with the semiconductor devices. This paper describes the requirements for successful integration of rf-passive devices and proposes multilayer thin film technology as an effective rf-integration technology.