滴注 发表于 2025-3-26 22:15:03

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仇恨 发表于 2025-3-27 04:18:20

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Junction 发表于 2025-3-27 05:30:50

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Mettle 发表于 2025-3-27 12:43:26

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Ceramic 发表于 2025-3-27 17:37:44

Advances in Solid State Physicshttp://image.papertrans.cn/a/image/149819.jpg

LITHE 发表于 2025-3-27 19:54:43

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彻底检查 发表于 2025-3-27 23:11:47

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mediocrity 发表于 2025-3-28 04:09:40

125 years of metal-semiconductor contacts: Where do we stand?,of intimate, abrupt, defect-free, and laterally homogeneous Si, GaAs, GaN, CdTe, and SiC Schottky contacts and, therefore, to be the fundamental mechanism that determines Schottky barrier heights. Other, but then secondary mechanisms are considered in addition.

Fibrillation 发表于 2025-3-28 07:36:45

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树上结蜜糖 发表于 2025-3-28 13:41:52

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查看完整版本: Titlebook: Advances in Solid State Physics 39; Bernhard Kramer Conference proceedings 1999 Springer-Verlag Berlin Heidelberg 1999 condensed matter.co