deciduous
发表于 2025-3-23 09:42:00
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Rotator-Cuff
发表于 2025-3-23 14:58:59
NATO Science Partnership Subseries: 3http://image.papertrans.cn/a/image/145552.jpg
Infuriate
发表于 2025-3-23 18:06:16
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咒语
发表于 2025-3-24 00:46:47
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交响乐
发表于 2025-3-24 06:01:38
Best Practice in Einkauf und Logistiknsitions in the (GaAs).(AlAs). superlattices (SL’s) were studied. The , , and growth directions have been considered . Below, we give a review of the group-theory method used and the main results obtained.
harangue
发表于 2025-3-24 09:49:37
Jörg Decker-Conradi,Astrid Borgmann. The abrupt edge of the density of states as a function of energy provides a very high differential gain above transparency leading to significant reductions in threshold current in appropriately designed devices compared with their bulk counterparts. The effective density of states of a two-dimens
摇摆
发表于 2025-3-24 11:58:32
Best Practice in Einkauf und Logistikmicrodisk lasers which support whispering gallery modes. InGaAsP/InP microdisks have recently been fabricated in our laboratories and have been pumped optically, resulting in the first achievement of CW room temperature lasing in these devices.
Incompetent
发表于 2025-3-24 16:34:00
Das Einkaufsnetzwerk der Saurer AGfunctions for optoelectronics devices . These include laser mode-locking elements, saturable elements for controlling the propagation of optical solitons in fibre transmission systems, all-optical bistable etalons, all-optical directional coupler switches and self-electro-optic devices for comm
藕床生厌倦
发表于 2025-3-24 22:36:15
Best Practice in Einkauf und Logistikctronic components to be consolidated into monolithic circuits. One of the best examples of an optoelectronic integrated structures is the active-matrix LCD, in which thousands of electro-optic spatial light modulators are integrated with the same number of transistors into a large array. But other
神圣不可
发表于 2025-3-25 02:23:15
Best Practice in Einkauf und Logistikaser.Diode laser achieve high performance through their sophisticated internal structures, which control the flow of electrons and light through the layers of semiconductor materials. These structures can be fabricated in several families of materials :A3B5,A2B6,A4B6.