独行者
发表于 2025-3-27 00:00:15
http://reply.papertrans.cn/103/10300/1029924/1029924_31.png
Extemporize
发表于 2025-3-27 04:45:48
http://reply.papertrans.cn/103/10300/1029924/1029924_32.png
avarice
发表于 2025-3-27 06:28:20
http://reply.papertrans.cn/103/10300/1029924/1029924_33.png
Lipoma
发表于 2025-3-27 12:27:33
Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simu simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the low occupation region. The RESET process in RRAM simulated with our stochastic model is in good agreement with experimental results.
Ankylo-
发表于 2025-3-27 17:11:06
Bonding Forces978-3-540-38195-2Series ISSN 0081-5993 Series E-ISSN 1616-8550