Obsessed
发表于 2025-3-26 22:54:55
Gilles Brougère, the reverse-biased drain and source substrate junction band to band tunneling (Ibtbt), and the gate induced drain leakage (Igidl). Each of those leakage currents becomes significant in nano-scaled devices tightening the constraints of nowadays digital designs .
珠宝
发表于 2025-3-27 01:38:06
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conscience
发表于 2025-3-27 08:17:28
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举止粗野的人
发表于 2025-3-27 10:56:25
Nonlinear Time Series978-0-387-69395-8Series ISSN 0172-7397 Series E-ISSN 2197-568X
Custodian
发表于 2025-3-27 13:52:36
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