易发怒 发表于 2025-3-28 16:50:28

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量被毁坏 发表于 2025-3-28 21:04:01

Photo-assisted metal-organic vapour phase epitaxy of zinc chalcogenidesloped as novel precursors, but the growth temperature must be as high as 500°C . The photo-assisted technique, therefore, is a promising tool for reduction in growth temperature and for obtaining high-quality epilayers when using these source combinations. By this technique, selective growth o

SEEK 发表于 2025-3-29 02:12:07

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Carcinogenesis 发表于 2025-3-29 05:08:42

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宽敞 发表于 2025-3-29 09:30:53

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不容置疑 发表于 2025-3-29 12:51:48

Self- and impurity diffusion processes in widegap II–VI materialsn a period of 10.s (e.g. growth of a multiple quantum well (MQW)) diffusivities must be ⩽ 10. cm. s. if diffusional spread should not exceed ~ 10 Å. Over a period of a year diffusivities must be ⩽ 10. cm. s. to contain any spread to < 10 Å.

agitate 发表于 2025-3-29 18:56:51

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epicondylitis 发表于 2025-3-29 22:47:14

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Ancestor 发表于 2025-3-30 03:35:08

Widegap II–VI Compounds for Opto-electronic Applications

insurgent 发表于 2025-3-30 05:53:43

Widegap II–VI Compounds for Opto-electronic Applications978-1-4615-3486-0
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查看完整版本: Titlebook: Widegap II–VI Compounds for Opto-electronic Applications; Harry E. Ruda (Assistant Professor) Book 1992 Springer Science+Business Media Do